Aluminum Nitride Properties

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aluminum nitride properties are unique among ceramics and include high thermal conductivity and electrical insulation. This combination makes it ideal for use in a number of power and microelectronics applications, including IC packages and submounts, ceramic printed circuit boards in high power modules, and more.

AlN’s thermal conductivity is a function of its lattice vibrations, also known as phonons. These vibrations are affected by temperature, impurities, pore size and distribution, grain size, compositional homogeneity, and orientation.

The atomic structure of AlN is most commonly found in the low-temperature wurtzite phase (w-AlN). It contains interpenetrating metal and nitrogen lattices with space group P63mc and c (0001> axes) and a (1120> axes).

Due to its small atomic mass, strong covalent bonding and simple crystal structure, AlN has a large band gap that is comparable to silicon carbide and gallium nitride.

This combination of features makes AlN an attractive material for application in power and microwave communication networks where the transfer of large amounts of energy requires fast heat dissipation.

In addition, its wide bandgap makes it a useful material for optoelectronics operating at deep ultraviolet frequencies. In addition, AlN has excellent optical absorption/emission characteristics at wavelengths of 200 nm and below.

In addition, AlN has a low coefficient of thermal expansion that closely matches that of Silicon wafer material. This makes it an ideal material for electronic components and systems that require a high degree of heat dissipation, such as power LEDs and ICs.